2023-03-06_euv-requirements-halved-applied-materials

Canonical Target Counts

TargetOccurrences
04_knowledge_base/EUV48
04_knowledge_base/Pattern Shaping46
04_knowledge_base/Sculpta46
04_knowledge_base/Multi-Patterning27
04_knowledge_base/微影製程22
02_companies/2330 台積電17
02_companies/Applied Materials17
02_companies/INTC16
04_knowledge_base/Via14
04_knowledge_base/Interconnect Stack14
02_companies/ASML9
04_knowledge_base/Process node9
04_knowledge_base/Semiconductor Fab9
04_knowledge_base/Copper8
04_knowledge_base/3nm8
04_knowledge_base/矽晶圓7
04_knowledge_base/Intel 18A6
04_knowledge_base/DUV5
03_industries/Foundry5
04_knowledge_base/Photoresist5
04_knowledge_base/CMP4
02_companies/LRCX4
04_knowledge_base/2nm4
04_knowledge_base/PVD3
04_knowledge_base/Ion Implantation3
04_knowledge_base/Semiconductor manufacturing3
02_companies/KLAC3
02_companies/Tokyo Ohka Kogyo3
02_companies/Aligned Data Centers3
04_knowledge_base/Chemical Vapor Deposition (CVD)3
04_knowledge_base/Overlay3
04_knowledge_base/Contact3
04_knowledge_base/TSMC N3E2
04_knowledge_base/Line-edge roughness2
02_companies/Together AI2
04_knowledge_base/Stochastic Defect2
04_knowledge_base/5nm2
04_knowledge_base/Deposition2
04_knowledge_base/Double Patterning2
04_knowledge_base/Line Width Roughness2
04_knowledge_base/DRAM1
04_knowledge_base/TSMC N51
02_companies/ASM1
04_knowledge_base/Self-aligned double patterning1
04_knowledge_base/Ruthenium1
04_knowledge_base/Critical dimension1
04_knowledge_base/Hard Mask1
04_knowledge_base/Thin-film deposition1
04_knowledge_base/Dry Resist1
04_knowledge_base/Aspect Ratio1
04_knowledge_base/Metal Oxide Resist1
04_knowledge_base/Local Edge Placement Error1
04_knowledge_base/Metal pitch1
04_knowledge_base/Mask layer1
04_knowledge_base/M0 metal1
04_knowledge_base/Local Critical Dimension Uniformity1
04_knowledge_base/Transistor1
04_knowledge_base/7nm1