2023-02-21_the-future-of-the-transistor
Canonical Target Counts
| Target | Occurrences |
|---|
| 04_knowledge_base/Transistor | 42 |
| 04_knowledge_base/2D material | 34 |
| 04_knowledge_base/Contact | 13 |
| 04_knowledge_base/Chemical Vapor Deposition (CVD) | 11 |
| 02_companies/INTC | 10 |
| 04_knowledge_base/CFET | 8 |
| 02_companies/2330 台積電 | 8 |
| 04_knowledge_base/Semiconductor Fab | 7 |
| 04_knowledge_base/基板 | 6 |
| 04_knowledge_base/矽晶圓 | 6 |
| 04_knowledge_base/CMOS | 6 |
| 03_industries/Foundry | 6 |
| 04_knowledge_base/Gate-All-Around | 5 |
| 04_knowledge_base/FinFET | 5 |
| 02_companies/imec | 4 |
| 04_knowledge_base/Modulator | 4 |
| 04_knowledge_base/Copper | 3 |
| 04_knowledge_base/Moore’s Law | 3 |
| 02_companies/Switch | 3 |
| 04_knowledge_base/微影製程 | 3 |
| 04_knowledge_base/PMMA | 3 |
| 04_knowledge_base/Transition Metal Dichalcogenide | 3 |
| 04_knowledge_base/PD | 2 |
| 04_knowledge_base/SiGe | 2 |
| 04_knowledge_base/Tungsten | 2 |
| 04_knowledge_base/EUV | 2 |
| 04_knowledge_base/MEMS | 2 |
| 04_knowledge_base/5nm | 2 |
| 04_knowledge_base/2nm | 2 |
| 04_knowledge_base/3nm | 2 |
| 04_knowledge_base/Deposition | 2 |
| 04_knowledge_base/Process node | 2 |
| 04_knowledge_base/MOCVD | 2 |
| 04_knowledge_base/Fermi-level pinning | 1 |
| 04_knowledge_base/Nanosheet | 1 |
| 04_knowledge_base/封裝 | 1 |
| 02_companies/Aligned Data Centers | 1 |
| 04_knowledge_base/Ion Implantation | 1 |
| 04_knowledge_base/Forksheet | 1 |
| 02_companies/CARR | 1 |
| 04_knowledge_base/Molybdenum | 1 |
| 02_companies/ASML | 1 |
| 02_companies/IBM | 1 |
| 02_companies/Together AI | 1 |
| 04_knowledge_base/3D integration | 1 |
| 04_knowledge_base/Etching | 1 |
| 04_knowledge_base/28nm | 1 |
| 04_knowledge_base/BEOL | 1 |
| 04_knowledge_base/FET | 1 |
| 04_knowledge_base/Atomic Layer Deposition | 1 |
| 04_knowledge_base/Directed Self-Assembly | 1 |
| 04_knowledge_base/FEOL | 1 |