2020-05-22_lam-research-lrcx-dry-deposit-and
Canonical Target Counts
| Target | Occurrences |
|---|
| 04_knowledge_base/EUV | 6 |
| 04_knowledge_base/Dry Resist | 6 |
| 04_knowledge_base/DRAM | 4 |
| 04_knowledge_base/Photoresist | 4 |
| 04_knowledge_base/DUV | 3 |
| 04_knowledge_base/Wet Photoresist | 3 |
| 02_companies/MU | 2 |
| 02_companies/000660 | 2 |
| 04_knowledge_base/Moore’s Law | 2 |
| 04_knowledge_base/Wet Deposit and Develop | 2 |
| 04_knowledge_base/Semiconductor Fab | 2 |
| 04_knowledge_base/Dry Deposit and Develop | 2 |
| 04_knowledge_base/Line-edge roughness | 1 |
| 02_companies/INTC | 1 |
| 02_companies/ASML | 1 |
| 02_companies/GlobalFoundries | 1 |
| 02_companies/LRCX | 1 |
| 02_companies/2330 台積電 | 1 |
| 02_companies/imec | 1 |
| 04_knowledge_base/Emerging Memory | 1 |
| 04_knowledge_base/Positive Resist | 1 |
| 04_knowledge_base/3nm | 1 |
| 03_industries/Foundry | 1 |
| 04_knowledge_base/Stochastic Defect | 1 |
| 04_knowledge_base/Line Collapse | 1 |
| 04_knowledge_base/Feature Size | 1 |
| 04_knowledge_base/2nm | 1 |
| 04_knowledge_base/Photoresist Equipment | 1 |
| 04_knowledge_base/Chemical Supply Chain | 1 |
| 04_knowledge_base/Leading-Edge Node | 1 |
| 04_knowledge_base/矽晶圓 | 1 |